The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jun. 21, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xiangnan Zhao, Wuhan, CN;

Songmin Jiang, Wuhan, CN;

Tingze Wang, Wuhan, CN;

Chenhui Li, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01);
Abstract

A memory includes a memory array and a peripheral circuit, wherein the memory array includes memory cells; the memory cells include a plurality of first memory cells coupled with a first selected word line, and a plurality of second memory cells coupled with a second selected word line; and the peripheral circuit is configured to: acquire a grouping result of the plurality of second memory cells, and if a first memory cell is coupled with a second memory cell in a first group through a first bit line, apply a first read voltage to the first memory cell at a first read duration; and if a first memory cell is coupled with a second memory cell in a second group through a second bit line, apply a second read voltage to the first memory cell at a second read duration.


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