Hubei, China

Tingze Wang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Tingze Wang: Innovator in Memory Device Technology

Introduction

Tingze Wang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory devices, showcasing his expertise through innovative patents. His work focuses on enhancing the efficiency and functionality of memory systems.

Latest Patents

Tingze Wang holds a patent for a method related to memory devices, titled "Memory devices, operation method thereof and memory system." This patent outlines a method for erasing a memory device, which includes applying a word-line voltage to a word line of the memory device. The method also involves applying a hold voltage to a selected dummy line for a specified time period, ensuring that the electric potential of the dummy line rises to a voltage higher than the word-line voltage. This innovative approach aims to improve the performance of memory devices.

Career Highlights

Tingze Wang is associated with Yangtze Memory Technologies Co., Ltd., where he continues to develop cutting-edge memory solutions. His work has positioned him as a key player in the advancement of memory technology, contributing to the company's reputation in the industry.

Collaborations

Tingze Wang collaborates with notable colleagues, including Lei Guan and HongTao Liu. Their combined expertise fosters a dynamic environment for innovation and development in memory technology.

Conclusion

Tingze Wang's contributions to memory device technology reflect his dedication to innovation and excellence. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as a significant inventor in the field.

Profile summary based on public USPTO records.
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