The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Apr. 25, 2023
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Lei Guan, Hubei, CN;
HongTao Liu, Hubei, CN;
Yuanyuan Min, Hubei, CN;
WenZhe Wei, Hubei, CN;
Tingze Wang, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
The present disclosure provides a method for erasing a memory device. The method includes applying a word-line voltage to a word line of the memory device, wherein a first set of memory cells coupled to the word line are each configured to store a first number of bits data. The method also includes applying a hold voltage to a selected dummy line for a first time period, wherein a second set of memory cells coupled to the selected dummy line are each configured to store a second number of bits data less than the first number of bits data. The method further includes removing the hold voltage from the selected dummy line after the first time period such that an electric potential of the selected dummy line rises to a first voltage higher than the word-line voltage; and increasing the first time period incrementally in each of subsequent erase loops.