Hubei, China

WenZhe Wei

This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: WenZhe Wei. Retrieved from https://idiyas.com/inventor/wenzhe-wei-cu9e0mca

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of WenZhe Wei in Memory Device Technology.

Introduction

WenZhe Wei is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory devices, showcasing his expertise through innovative patents. His work focuses on enhancing the efficiency and functionality of memory systems.

Latest Patents

WenZhe Wei holds a patent for a method related to memory devices, titled "Memory devices, operation method thereof and memory system." This patent outlines a method for erasing a memory device, which includes applying a word-line voltage to a word line of the memory device. The method also involves applying a hold voltage to a selected dummy line for a specified time period, ensuring that the electric potential of the dummy line rises to a voltage higher than the word-line voltage. This innovative approach aims to improve the performance of memory devices.

Career Highlights

WenZhe Wei is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge memory technology, contributing to advancements in the industry. His dedication to research and development has positioned him as a key player in the field.

Collaborations

WenZhe Wei collaborates with talented individuals such as Lei Guan and HongTao Liu. These partnerships foster a creative environment that encourages innovation and the development of new technologies.

Conclusion

WenZhe Wei's contributions to memory device technology exemplify his commitment to innovation. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role in advancing the field. Through collaboration with skilled colleagues, he continues to push the boundaries of what is possible in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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