The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Dec. 04, 2023
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Jianquan Jia, Wuhan, CN;
Xiangnan Zhao, Wuhan, CN;
Yuanyuan Min, Wuhan, CN;
Ying Cui, Wuhan, CN;
Kaikai You, Wuhan, CN;
Chenhui Li, Wuhan, CN;
Wei Qi, Wuhan, CN;
Jiameng Cui, Wuhan, CN;
Lei Guan, Wuhan, CN;
Junbao Wang, Wuhan, CN;
Lei Jin, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G06F 12/02 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G11C 16/0483 (2013.01); G11C 16/16 (2013.01); G11C 16/3445 (2013.01); G11C 16/3459 (2013.01);
Abstract
A method for operating a memory includes: during the erase phase, applying an erase voltage to the word line, and applying an erase voltage to the select line coupled to a target select gate; during the program phase for select gate, applying a pass voltage to the word line, and applying a program voltage to the select line coupled to the target select gate.