The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Oct. 31, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yali Song, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Kaikai You, Wuhan, CN;
An Zhang, Wuhan, CN;
Xiangnan Zhao, Wuhan, CN;
Ying Cui, Wuhan, CN;
Shan Li, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Lei Jin, Wuhan, CN;
Xueqing Huang, Wuhan, CN;
Meng Lou, Wuhan, CN;
Jinlong Zhang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method for operating a memory device is provided. The memory device includes a first word line, a second word line, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first word line and the second word line. A first pass voltage is applied to the first dummy word line in a program operation. A second pass voltage is applied to the second dummy word line in the program operation. The first pass voltage is different from the second pass voltage.