The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Aug. 19, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xiangnan Zhao, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory device includes a memory cell array and peripheral circuits coupled to the memory cell array. The peripheral circuits are configured to perform twice program operations on one or more first memory cells in the memory cell array for storing cold data into the one or more first memory cells. The twice program operations include a first time program operation and a second time program operation. To perform the twice program operations, the peripheral circuits are configured to performing the first time program operation for successfully storing the cold data into the one or more first memory cells, and performing the second time program operation for improving retention characteristics of the cold data.


Find Patent Forward Citations

Zhao, Xiangnan. (2026). Memory device, memory system, and program operation method thereof (U.S. Patent No. 12638981). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12638981

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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