Memory device to program multiple bit lines using a single word line programming pulse

Abstract

The present disclosure provides a method of operating a memory, a memory, a memory system and an electronic device. In an example, a method of operating a memory is provided. The memory includes multiple word lines, and each of the plurality of word lines is coupled to a plurality of memory cells. The method includes: performing a first programming operation on a plurality of memory cells coupled to a selected word line among the multiple word lines, the first programming operation including applying a one-pulse to the selected word line to program the multiple memory cells coupled to the selected word line into N programmed states; and performing a second programming operation on the selected word line to program the multiple memory cells coupled to the selected word line into N target programmed states, where N is a positive integer.