Memory devices and operation methods thereof, and memory systems

Abstract

An example memory device includes: memory cells constituting memory cell rows coupled to word lines and memory strings coupled to bit lines; and a peripheral circuit configured to: perform a read operation on the memory cells connected to a first word line to obtain at least two read values; during the read operation performed on the memory cells connected to the first word line, divide the memory cells connected to a second word line into at least two groups based on threshold voltages of the memory cells connected to the second word line; and determine read results of the memory cells connected to the first word line from the at least two read values based on grouping information of the memory cells connected to the second word line. The first word line and the second word line are word lines adjacent to each other.