The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 18, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Xiangnan Zhao, Wuhan, CN;
Feng Xu, Wuhan, CN;
Yuanyuan Min, Wuhan, CN;
Ying Cui, Wuhan, CN;
Chenhui Li, Wuhan, CN;
Wei Qi, Wuhan, CN;
Junbao Wang, Wuhan, CN;
Lei Jin, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
The present disclosure provides a memory device, a memory system, and an operation method of a memory device, and relates to the technical field of semiconductor chips. The memory device includes a memory cell array including a source layer, a bottom select gate layer, and a gate layer, and the bottom select gate layer is located between the source layer and the gate layer, wherein the bottom select gate layer includes a plurality of bottom select gates, and a bottom select gate of a first memory string and a bottom select gate of a second memory string are connected with a same select line; and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to apply a selection voltage to the select line to control the first memory string and the second memory string.