The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Dec. 15, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ting Cheng, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Lei Jin, Wuhan, CN;

Xiangnan Zhao, Wuhan, CN;

Xuezhun Xie, Wuhan, CN;

Shiyu Xia, Wuhan, CN;

Yuanyuan Min, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/00 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01);
Abstract

A three-dimensional (3D) memory device and method for reading the same are provided. The device includes memory cell strings each including multiple memory cells. In each memory cell string, a topmost memory cell is connected to a top selection gate connected to a bit line, and a bottommost memory cell is connected to a bottom selection gate. The method includes sequentially programming multiple memory cells in a memory cell string according to a programming sequence; in reading a memory cell, applying a corresponding bit line voltage to the memory cell string according to the programming sequence of the memory cell.


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