The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Dec. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Yuanyuan Min, Wuhan, CN;
Ying Cui, Wuhan, CN;
Yali Song, Wuhan, CN;
Hongtao Liu, Wuhan, CN;
Xinlei Jia, Wuhan, CN;
An Zhang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A programming method and a semiconductor device are provided. The semiconductor device includes a memory string that includes a plurality of first memory cells and a first dummy cell stacked in sequence, and each first memory cell is connected to a respective word line, and a gate of the first dummy cell is connected to a first dummy word line. The method includes: in a programming phase, applying a first pass voltage to a word line corresponding to a first unprogrammed memory cell, wherein the first unprogrammed memory cell is an unprogrammed memory cell of the plurality of first memory cells separated from a to-be-programmed memory cell by a first preset number of first memory cells; and after applying the first pass voltage to the word line corresponding to the first unprogrammed memory cell, applying a programming voltage to the word line corresponding to the to-be-programmed memory cell.