The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

May. 13, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Songmin Jiang, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Pengyu Xu, Wuhan, CN;

Jiameng Cui, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/34 (2006.01); G11C 29/36 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/102 (2013.01); G11C 16/12 (2013.01); G11C 16/34 (2013.01); G11C 29/36 (2013.01);
Abstract

An example of the present disclosure disclose a memory comprising a memory array and a peripheral circuit coupled with the memory array. The memory array comprises a plurality of memory cells. The peripheral circuit is configured to: apply N program voltages to a word line coupled with a to-be-programmed memory cell with a target state being the highest state to perform a first program operation, to program the to-be-programmed memory cell with the target state being the highest state to a first threshold voltage, wherein a difference between a target threshold voltage corresponding to the to-be-programmed memory cell with the target state being the highest state and the first threshold voltage is less than a first preset value, and N is a positive integer; and apply M program voltages to the word line to perform a second program operation.


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