The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
May. 22, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A programming method for a memory device, a memory device and a memory system including applying first and second pass voltages with different ramp timings. The programming method includes: applying a programming voltage on a selected word line; applying a first pass voltage on a first word line adjacent to the selected word line; and applying a second pass voltage on a second word line adjacent to the selected word line, wherein the first pass voltage and the second pass voltage include at least two ramp phases, and the first pass voltage and the second pass voltage have different ramp timings in at least one ramp phase among other ramp phases after the first ramp phase, and the ramp timing is the timing when the voltage value starts to ramp up from a certain voltage value.