The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jul. 30, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hongtao Liu, Wuhan, CN;

Pengyu Xu, Wuhan, CN;

Ying Huang, Wuhan, CN;

Lei Guan, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01);
Abstract

Example memory devices, systems, and methods for reducing program disturbance in memory devices are disclosed. One example method includes during an n-th loop of a program operation performed on a first memory cell in a memory cell array, applying a first voltage to a first bit line coupled to a second memory cell in the memory cell array, where the first memory cell and the second memory cell are coupled to a first word line. The first bit line is discharged to decrease a voltage of the first bit line from the first voltage to a second voltage, where the second voltage is lower than the first voltage. After the first voltage is applied to the first bit line, a second bit line is set to floating, where the second bit line is coupled to the first memory cell.


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