The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Aug. 17, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Yi Zhang, Wuhan, CN;

Lei Guan, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Xiaojiang Guo, Wuhan, CN;

Chenhui Li, Wuhan, CN;

Jialiang Deng, Wuhan, CN;

Zhenjia Chen, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0634 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for operating a memory device having multiple storage modes. In one example method, a portion of a memory array is selected, wherein the portion of the memory array is programmable in a first storage mode or a second storage mode. The second storage mode has a lower storage density than the first storage mode, and the first storage mode corresponds to a first erase operation. A switch erase operation is performed to switch the portion of the memory array from the first storage mode to a switched second storage mode, wherein the switched second storage mode has the same storage density as the second storage mode and corresponds to the switch erase operation. The switch erase operation is different from the first erase operation on the memory array in the first storage mode.


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