Yangtze Memory Technologies Co., Ltd.

Lei Guan

Ying Huang

Yuanyuan Min

HongTao Liu

Hongtao Liu

XiangNan Zhao

Lei Jin

Tingze Wang

Songmin Jiang

WenZhe Wei

A memory, a memory system and a method of operating the memory are disclosed, belonging to the field of storage technologies. When an erase operation is performed on various strings in the block of the memory, if there are a first string that has been erased and a second string that has not been erased among the strings, the selection line coupled to the first selection transistor of the first string is floated in advance before the selection line coupled to the first selection transistor of the second string is floated, to thereby reduce the erasing speed of the first string and prevent the first string from being over-erased during the erasing of the second string, which reduces the possibility of lateral spreading of memory cells in the subsequent first string after programming, and weakens the threshold voltage drift of the memory cells in the first string.

Memory device and methods of erasure operation using different float times for string selection transistors

The present disclosure provides a method for erasing a memory device. The method includes applying a word-line voltage to a word line of the memory device, wherein a first set of memory cells coupled to the word line are each configured to store a first number of bits data. The method also includes applying a hold voltage to a selected dummy line for a first time period, wherein a second set of memory cells coupled to the selected dummy line are each configured to store a second number of bits data less than the first number of bits data. The method further includes removing the hold voltage from the selected dummy line after the first time period such that an electric potential of the selected dummy line rises to a first voltage higher than the word-line voltage; and increasing the first time period incrementally in each of subsequent erase loops.

Memory devices, operation method thereof and memory system

Upon determining that a first read operation on one memory cell of a plurality of memory cells has failed, a second read operation on the memory cell is started. In the second read operation, a second pass voltage is applied to first unselected word lines, and a first pass voltage is applied to second unselected word lines. The first unselected word lines include one or more word lines adjacent to a selected word line, and the second unselected word lines include remaining unselected word lines. The selected word line corresponds to the memory cell to be read. The first pass voltage includes a voltage applied to the first unselected word lines in the first read operation. The second pass voltage is higher than the first pass voltage.

Memory device, memory system, and read operation method thereof

Growing community of inventors

Hubei, China

Lei Guan