The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Feb. 18, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Kaikai You, Wuhan, CN;
Ying Cui, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Yali Song, Wuhan, CN;
Shan Li, Wuhan, CN;
An Zhang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A memory device includes a memory array including memory strings. Each memory string includes a plurality of top memory cells, a plurality of bottom memory cells, and one or more dummy memory cells between the top memory cells and the bottom memory cells. The memory device also includes a plurality of word lines respectively coupled to gate terminals of the top memory cells and the bottom memory cells, and one or more dummy word lines respectively coupled to gate terminals of the one or more dummy memory cells. The memory device further includes a control circuit configured to program a target memory cell coupled to a selected word line of the plurality of word lines. To program the target memory cell, the control circuit is configured to apply a biased dummy word line pre-pulse signal to the one or more dummy word lines in a pre-charge period prior to a programming period.