The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Jan. 13, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Shan Li, Wuhan, CN;

Kaikai You, Wuhan, CN;

Ying Cui, Wuhan, CN;

Jianquan Jia, Wuhan, CN;

Kaiwei Li, Wuhan, CN;

An Zhang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/14 (2006.01); G11C 8/08 (2006.01); G11C 7/14 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 7/14 (2013.01); G11C 8/14 (2013.01); G11C 11/4074 (2013.01); G11C 11/4094 (2013.01); G11C 16/0425 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/06 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01);
Abstract

A memory device includes a top select cell, a top dummy cell and a string of memory cells. The top select cell has a first terminal coupled to a bit line and a control terminal coupled to a top select line. The top dummy cell has a control terminal coupled to a top dummy word line. The string of memory cells has control terminals coupled to respective word lines. A method operating the memory device includes prior to a program operation, applying a pre-pulse voltage to the top dummy word line, the top select line and the bit line while applying a low voltage to the word lines, and then sequentially applying the low voltage to the top dummy word line, the top select line and the bit line while applying the low voltage to the word lines.


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