The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 18, 2023
Yangtze Memory Technologies Co., Ltd, Hubei, CN;
Jiayin Han, Hubei, CN;
Xinlei Jia, Hubei, CN;
Kaikai You, Hubei, CN;
An Zhang, Hubei, CN;
Lei Jin, Hubei, CN;
Yangtze Memory Technologies Co., LTD, Wuhan, CN;
Abstract
Examples of the present disclosure provide a memory and an operation method thereof, a memory system and an electronic device. The operation method comprises: applying a pass voltage to word lines coupled to unselected memory cells of one of memory strings according to a program order of a selected memory cell of the memory string when performing a read operation on the selected memory cell, wherein the earlier the program order of the selected memory cell is, the greater the pass voltage applied to the word lines coupled to the unselected memory cells of the memory string during the read operation is. In the examples of the present disclosure, the pass voltage applied to the word lines coupled to the unselected memory cells is determined according to the program order of the selected memory cell, i.e., according to different degrees of impact of a background pattern dependency effect experienced by the selected memory cell, such that the impact of the background pattern dependency effect can be decreased, and the read disturb is reduced.