The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Mar. 07, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yali Song, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Kaikai You, Wuhan, CN;
An Zhang, Wuhan, CN;
Xiangnan Zhao, Wuhan, CN;
Ying Cui, Wuhan, CN;
Shan Li, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Lei Jin, Wuhan, CN;
Xueqing Huang, Wuhan, CN;
Meng Lou, Wuhan, CN;
Jinlong Zhang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method for operating a memory is disclosed. The memory includes a first group of word lines, a second group of word lines, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first group of word lines and the second group of word lines. A first pass voltage is applied to the first dummy word line and applying a second pass voltage to the second dummy word line. A program voltage is applied to a selected word line, wherein a condition is met: a first voltage difference between the first pass voltage and a first threshold voltage of a first dummy cell corresponding to the first dummy word line is different from a second voltage difference between the second pass voltage and a second threshold voltage of a second dummy cell corresponding to the second dummy word line.