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For the Inventor, By the Inventor

Osaka, Japan

Akihiko Ishibashi

This inventor holds 69 USPTO granted patents and 7 published patent applications and 4 EPO patents, primarily in Nitride Semiconductors (CPC class H01L). Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Panasonic Intellectual Property Management Co., Ltd.. Active years: 1996-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akihiko Ishibashi. Retrieved from https://idiyas.com/inventor/akihiko-ishibashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69 

% Patents Active = 79.7

 

Average Co-Inventor Count = 4.7

ph-index = 14

Forward Citations = 623(Granted Patents)

Forward Citations (Not Self Cited) = 604(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Osaka-fu, JP (2005)
  • Sakai, JP (1996 - 2008)
  • Mishima-gun, JP (2007 - 2012)
  • Toyama, JP (2015)
  • Osaka, JP (1999 - 2023)

Company Filing History:

goldMedal44 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
silverMedal16 out of 16,454 
 
Panasonic Corporation
 patents
bronzeMedal9 out of 13,338 
 
Panasonic Intellectual Property Management Co., Ltd.
 patents
4. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1996-2023

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Areas of Expertise:
Nitride Semiconductor
Light Emitting Diode
Wavelength Converter
Group III Nitride
Semiconductor Device
RAMO4 Substrate
Optical Pickup
Nitride Laser
Fabrication Method
Semiconductor Element
Manufacturing Method
69 patents (USPTO):Explore Patents
1. 11643752 - ScAlMgO4 monocrystalline substrate, and method of manufacture thereof (2023-05-09),
2. 11441237 - [object Object] (2022-09-13),
3. 11437773 - Wavelength conversion device (2022-09-06),
4. 11370076 - RAMO4 substrate and manufacturing method thereof (2022-06-28),
5. 11335839 - Group III nitride semiconductor light emitting diode, and method for producing same (2022-05-17),
6. 10989985 - Wavelength converter (2021-04-27),
7. 10923346 - Group III nitride semiconductor and method for producing same (2021-02-16),
8. 10886435 - Group III nitride semiconductor with InGaN diffusion blocking layer (2021-01-05),
9. 10350725 - RAMO4 substrate and manufacturing method thereof (2019-07-16),
10. 9899564 - Group III nitride semiconductor and method for producing same (2018-02-20),
11. 9899213 - Group III nitride semiconductor, and method for producing same (2018-02-20),
12. 8981340 - Nitride semiconductor device and production method thereof (2015-03-17),
13. 8222670 - Semiconductor light emitting element and method for manufacturing same (2012-07-17),
14. 8198637 - Nitride semiconductor laser and method for fabricating the same (2012-06-12),
15. 8044430 - Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration (2011-10-25),

As an assistant specialized in innovations, inventions, inventors, patent attorneys, assignees, and patents, I'm here to assist you on your request regarding inventor Akihiko Ishibashi's remarkable contributions to the world of technology and innovation. Akihiko Ishibashi, based in Osaka, JP, has obtained an impressive 69 patents throughout his career, showcasing his dedication to pioneering advancements in the field.

Latest Patents:

1. **ScAlMgO4 Monocrystalline Substrate:** A groundbreaking invention, this monocrystalline substrate demonstrates high cleavability and minimizes cracking in the GaN film grown on it. The substrate boasts a crystal oxygen concentration of 57 atom % or less, as confirmed by inductively coupled plasma atomic emission spectroscopy analysis.

2. **General Formula RAMO Substrate:** Another significant patent by Akihiko Ishibashi, this substrate is designed to resist cracking during and after the formation of group III nitride crystal. With specific characteristics such as a curvature radius r of 52 m or more and a correlation coefficient ρ of 0.81 or more, this innovation illustrates Ishibashi's ingenuity.

Career Highlights:

Having worked at Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation, Akihiko Ishibashi has left a lasting impact on the technological landscape. His relentless pursuit of innovation and commitment to excellence have established him as a visionary in the industry.

Collaborations:

Throughout his career, Akihiko Ishibashi has collaborated with esteemed professionals such as Isao Kidoguchi and Yoshiaki Hasegawa. These partnerships have contributed to the development of groundbreaking technologies and inventions, further solidifying Ishibashi's reputation as an esteemed inventor.

In conclusion, Akihiko Ishibashi's remarkable journey in the world of innovation exemplifies his unwavering dedication to pushing the boundaries of technology. His pioneering spirit and commitment to excellence continue to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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