The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
May. 17, 2011
Naomi Anzue, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Yoshiaki Hasegawa, Shiga, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Naomi Anzue, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Yoshiaki Hasegawa, Shiga, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor light-emitting device according to the present invention includes: a GaN substratecontaining an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structureprovided on a main surface of the GaN substrate; a p-electrodeformed on the multilayer structure; a first n-electrodesubstantially covering the entire rear surface of the GaN substrate; and a second n-electrodeprovided on the first n-electrodeso as to expose at least a portion of the periphery of the first n-electrode