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For the Inventor, By the Inventor

Shiga, Japan

Yoshiaki Hasegawa

This inventor holds 47 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Nitride Semiconductors. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation. Active years: 2000-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiaki Hasegawa. Retrieved from https://idiyas.com/inventor/yoshiaki-hasegawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 70.2


Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 315(Granted Patents)


Location History:

  • Osaka, JP (2000 - 2010)
  • Katano, JP (2003 - 2011)
  • Shiga, JP (2009 - 2012)
  • Okayama, JP (2010 - 2013)

Company Filing History:

goldMedal26 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
silverMedal21 out of 16,454 
 
Panasonic Corporation
 patents

Years Active: 2000-2013

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Areas of Expertise:
Nitride Semiconductor
Light-Emitting Device
Semiconductor Laser
Quantum Well
Manufacturing Method
Optical Pickup
Group III Nitride
Short-Wavelength Laser
Electronic Apparatus
Semiconductor Layer
Fabrication Process
Conductive Members
47 patents (USPTO):Explore Patents
1. 8437376 - Nitride semiconductor light-emitting device (2013-05-07),
2. 8306085 - Nitride compound semiconductor element and method for manufacturing same (2012-11-06),
3. 8231726 - Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate (2012-07-31),
4. 8222670 - Semiconductor light emitting element and method for manufacturing same (2012-07-17),
5. 8194711 - Nitride semiconductor laser device (2012-06-05),
6. 8130805 - Semiconductor laser apparatus (2012-03-06),
7. 8093685 - Nitride compound semiconductor element (2012-01-10),
8. 8039283 - Nitride compound semiconductor element and method for manufacturing same (2011-10-18),
9. 8030677 - Semiconductor light emitting element and method for manufacturing same (2011-10-04),
10. 8018134 - Light source, optical pickup, and electronic apparatus (2011-09-13),
11. 7880192 - Nitride semiconductor light emitting element and nitride semiconductor light emitting device (2011-02-01),
12. 7852891 - Nitride semiconductor light-emitting device (2010-12-14),
13. 7846820 - Nitride semiconductor device and process for producing the same (2010-12-07),
14. 7816696 - Nitride semiconductor device and method for manufacturing same (2010-10-19),
15. 7759684 - Nitride semiconductor light emitting device and method for fabricating the same (2010-07-20),

Title: The Innovative Journey of Yoshiaki Hasegawa

Introduction: Yoshiaki Hasegawa is a pioneering inventor hailing from Shiga, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yoshiaki Hasegawa holds several patents in the realm of electronics and robotics, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: Throughout his illustrious career, Hasegawa has been instrumental in developing cutting-edge technologies that have revolutionized various industries. His innovative spirit and commitment to excellence have earned him recognition as a trailblazer in the world of invention.

Collaborations: Hasegawa has collaborated with leading research institutions and tech companies to further his inventive pursuits. His ability to work in multidisciplinary teams has led to the creation of groundbreaking solutions that have had a lasting impact on the field of innovation.

Conclusion: In conclusion, Yoshiaki Hasegawa's relentless passion for innovation and his remarkable contributions to the world of technology make him a true visionary in the realm of invention. His inventive spirit continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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