The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Dec. 27, 2006
Yoshiaki Hasegawa, Shiga, JP;
Gaku Sugahara, Nara, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor device according to the present invention includes a n-GaN substrateand a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrateand including a p-type region, an n-type region and an active layer between them. An SiOlayerwith an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrodeis arranged on the back surface of the substrate. The p-side electrode includes a p-side contact electrodethat contacts with the portion of the p-type region and a p-side interconnect electrodethat covers the p-side contact electrodeand the SiOlayer. Part of the p-side contact electrodeis exposed under the p-side interconnect electrode