The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Dec. 20, 2006
Yoshiaki Hasegawa, Shiga, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Yoshiaki Matsuda, Hyogo, JP;
Yoshiaki Hasegawa, Shiga, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Yoshiaki Matsuda, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structuresupported by an upper face of the substrate. First, a waferto be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structureare grown on the wafer. By cleaving the waferand the semiconductor layers, a cleavage plane in the multilayer structureis formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.