The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Mar. 09, 2006
Yoshiaki Hasegawa, Shiga, JP;
Gaku Sugahara, Nara, JP;
Naomi Anzue, Osaka, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Yoshiaki Hasegawa, Shiga, JP;
Gaku Sugahara, Nara, JP;
Naomi Anzue, Osaka, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate; a semiconductor multilayer structureformed on a principal face of the n-GaN substrate, the semiconductor multilayer structureincluding a p-type region and an n-type region; a p-side electrodewhich is in contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-side electrodeprovided on the rear face of the n-GaN substrate. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrodeis adjusted to 5 atom % or less.