The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Nov. 11, 2011
Shinji Yoshida, Shiga, JP;
Kenji Orita, Osaka, JP;
Yoshiaki Hasegawa, Okayama, JP;
Atsunori Mochida, Hyogo, JP;
Shinji Yoshida, Shiga, JP;
Kenji Orita, Osaka, JP;
Yoshiaki Hasegawa, Okayama, JP;
Atsunori Mochida, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μmor less.