The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2012

Filed:

Oct. 13, 2005
Applicants:

Naomi Anzue, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Yoshiaki Hasegawa, Shiga, JP;

Inventors:

Naomi Anzue, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Yoshiaki Hasegawa, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substratehaving an upper face and a lower face and a semiconductor multilayer structuresupported by the upper face of the substrate, such that the substrateand the semiconductor multilayer structurehave at least two cleavage planes. At least one cleavage inducing memberwhich is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing memberalong a direction parallel to the cleavage plane is smaller than a size of the upper face of the substratealong the direction parallel to the cleavage plane.


Find Patent Forward Citations

Loading…