The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jan. 19, 2007
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Yasutoshi Kawaguchi, Hyogo, JP;
Yasuhito Takahashi, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Yasutoshi Kawaguchi, Hyogo, JP;
Yasuhito Takahashi, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×10to 2×10cm. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.