Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Yoshiaki Hasegawa

Akihiko Ishibashi

Toshiya Yokogawa

Isao Kidoguchi

Gaku Sugahara

Yuzaburo Ban

Ayumu Tsujimura

Ryoko Miyanaga

Toshitaka Shimamoto

Masahiro Kume

Nobuyuki Otsuka

Yasutoshi Kawaguchi

Atsushi Yamada

Kenji Harafuji

Masakatsu Suzuki

Naomi Anzue

Yasuo Kitaoka

Kiyoshi Ohnaka

Satoshi Kamiyama

Hiroyoshi Yajima

Atsunori Mochida

Kiminori Mizuuchi

Kiyoyuki Morita

Keiji Ito

Yoshiaki Matsuda

Daisuke Ueda

Hiroyuki Furuya

Yoshihiro Hara

Masaaki Yuri

Shinji Yoshida

Hisashi Minemoto

Toru Takayama

Kenji Orita

Yasuhito Takahashi

Nobuyuki Uemura

Satoshi Murasawa

Kenichi Matsuda

A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 &#x3bc;mor less.

Nitride semiconductor light-emitting device

The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structuresupported by an upper face of the substrate. First, a waferto be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structureare grown on the wafer. By cleaving the waferand the semiconductor layers, a cleavage plane in the multilayer structureis formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

Nitride compound semiconductor element and method for manufacturing same

An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2&#xd7;10to 2&#xd7;10cm. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate

A semiconductor light-emitting device according to the present invention includes: a GaN substratecontaining an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structureprovided on a main surface of the GaN substrate; a p-electrodeformed on the multilayer structure; a first n-electrodesubstantially covering the entire rear surface of the GaN substrate; and a second n-electrodeprovided on the first n-electrodeso as to expose at least a portion of the periphery of the first n-electrode

Semiconductor light emitting element and method for manufacturing same

A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.

Nitride semiconductor laser device

A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction.

Semiconductor laser apparatus

A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substratehaving an upper face and a lower face and a semiconductor multilayer structuresupported by the upper face of the substrate, such that the substrateand the semiconductor multilayer structurehave at least two cleavage planes. At least one cleavage inducing memberwhich is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing memberalong a direction parallel to the cleavage plane is smaller than a size of the upper face of the substratealong the direction parallel to the cleavage plane.

Nitride compound semiconductor element

A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

Light source, optical pickup, and electronic apparatus

A nitride semiconductor device according to the present invention includes a n-GaN substrateand a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrateand including a p-type region, an n-type region and an active layer between them. An SiOlayerwith an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrodeis arranged on the back surface of the substrate. The p-side electrode includes a p-side contact electrodethat contacts with the portion of the p-type region and a p-side interconnect electrodethat covers the p-side contact electrodeand the SiOlayer. Part of the p-side contact electrodeis exposed under the p-side interconnect electrode

Nitride semiconductor light emitting element and nitride semiconductor light emitting device

A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.

A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate; step (B) of forming on the substratea plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate; step (C) of selectively growing AlGaInN crystals (0&#x2266;x, y, z&#x2266;1: x+y+z=1)on the upper faces of the plurality of stripe ridges, the AlGaInN crystals containing an n-type impurity at a first concentration; and step (D) of growing an AlGaInN crystal (0&#x2266;x', y&#x2032;, z&#x2032;&#x2266;1:x&#x2032;+y&#x2032;+z&#x2032;=1)on the AlGaInN crystals, the AlGaInN crystalcontaining an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlGaInN crystalswith the AlGaInN crystalto form one nitride semiconductor layer

Nitride semiconductor device and process for producing the same

An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate; a semiconductor multilayer structureformed on a principal face of the n-GaN substrate, the semiconductor multilayer structureincluding a p-type region and an n-type region; a p-side electrodewhich is in contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-side electrodeprovided on the rear face of the n-GaN substrate. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrodeis adjusted to 5 atom % or less.

Nitride semiconductor device and method for manufacturing same

A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.

Growing community of inventors

Shiga, Japan

Yoshiaki Hasegawa