The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Apr. 20, 2005
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Toshitaka Shimamoto, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Toshitaka Shimamoto, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate; step (B) of forming on the substratea plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate; step (C) of selectively growing AlGaInN crystals (0≦x, y, z≦1: x+y+z=1)on the upper faces of the plurality of stripe ridges, the AlGaInN crystals containing an n-type impurity at a first concentration; and step (D) of growing an AlGaInN crystal (0≦x', y′, z′≦1:x′+y′+z′=1)on the AlGaInN crystals, the AlGaInN crystalcontaining an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlGaInN crystalswith the AlGaInN crystalto form one nitride semiconductor layer