The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 13, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Akihiko Ishibashi, Osaka, JP;

Akio Ueta, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 31/1852 (2013.01);
Abstract

A Group III nitride semiconductor containing: a RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMOsubstrate, having therebetween a dissimilar film that contains a material different from the RAMOsubstrate, and has plural openings.


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