The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 09, 2017
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Akio Ueta, Hyogo, JP;

Akihiko Ishibashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/22 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/183 (2013.01); C30B 29/22 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/02046 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02598 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 21/0242 (2013.01); H01L 21/02425 (2013.01); H01L 33/007 (2013.01);
Abstract

On an RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.


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