The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Sep. 06, 2019
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Abstract
A Group III nitride semiconductor for growing a high-quality crystal having a low defect density and a method for producing the Group III nitride semiconductor. The Group III nitride semiconductor includes an RAMOsubstrate including a single crystal represented by the general formula RAMO(where R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn and Cd); a p-type Group III nitride crystal layer disposed on the RAMOsubstrate; a plurality of n-type Group III nitride crystal layers disposed on the p-type Group III nitride crystal layer; and a Group III nitride crystal layer disposed on the n-type Group III nitride crystal layers.