Company Filing History:

16 out of 16,453

Panasonic Corporation

patents

11 out of 27,375

Matsushita Electric Industrial Co., Ltd.

patents

3 out of 13,307

Panasonic Intellectual Property Management Co., Ltd.

patents

Years Active: 2003-2022

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30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11335839 - Group III nitride semiconductor light emitting diode, and method for producing same (2022-05-17),

2. 10923346 - Group III nitride semiconductor and method for producing same (2021-02-16),

3. 10763395 - Light emitting diode element and method for manufacturing same (2020-09-01),

4. 9520344 - Semiconductor module for electric power (2016-12-13),

5. 8916967 - Semiconductor device (2014-12-23),

6. 8754422 - Semiconductor device and process for production thereof (2014-06-17),

7. 8699228 - Power module (2014-04-15),

8. 8530943 - Semiconductor device (2013-09-10),

9. 8421151 - Semiconductor device and process for production thereof (2013-04-16),

10. 7964911 - Semiconductor element and electrical apparatus (2011-06-21),

11. 7846828 - Semiconductor device and method for fabricating the same (2010-12-07),

12. 7816688 - Semiconductor device and production method therefor (2010-10-19),

13. 7791308 - Semiconductor element and electrical apparatus (2010-09-07),

14. 7786565 - Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor (2010-08-31),

15. 7709403 - Silicon carbide-oxide layered structure, production method thereof, and semiconductor device (2010-05-04),

Title: Kenya Yamashita: Pioneering Innovator in Semiconductor Technology

Introduction

Kenya Yamashita is a noteworthy inventor based in Osaka, Japan, recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 30 patents, Yamashita's innovations have enhanced the efficiency and performance of light-emitting diodes, particularly involving Group III nitride semiconductors.

Latest Patents

Yamashita's latest patents showcase his expertise in improving light extraction efficiency in Group III nitride semiconductor light-emitting diodes. His inventions encompass a Group III nitride semiconductor light-emitting diode, which features an RAMO layer made of a single crystal adhering to specific elemental compositions. The layered product is designed for optimal light emission properties. Furthermore, another patent highlights the production of high-quality Group III nitride semiconductors, effectively addressing defect density through the use of RAMO substrates and well-structured p-type and n-type crystal layers.

Career Highlights

Throughout his career, Kenya Yamashita has been associated with leading companies in the technology sector, including Panasonic Corporation and Matsushita Electric Industrial Co., Ltd. His tenure at these renowned organizations has allowed him to cultivate his skills as an inventor and researcher in semiconductor technologies.

Collaborations

Yamashita has collaborated with noted professionals in his field, such as Osamu Kusumoto and Makoto Kitabatake. These partnerships have facilitated the advancement of innovative solutions in semiconductor applications, solidifying Yamashita's reputation as a leading inventor.

Conclusion

In conclusion, Kenya Yamashita's contributions to semiconductor technology through his extensive patent portfolio exemplify the impact of innovative thinking in advancing industry standards. His work continues to influence the development of efficient light-emitting diodes, affirming his status as a prominent figure in the realm of inventions and innovations.

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