The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Aug. 20, 2009
Kenya Yamashita, Hyogo, JP;
Chiaki Kudou, Hyogo, JP;
Kenya Yamashita, Hyogo, JP;
Chiaki Kudou, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The semiconductor device includes: a substrateand a drift layer, which are made of a wide-bandgap semiconductor; a p-type welland a first n-type doped region, which are defined in the drift layer; a source electrode, which is electrically connected to the first n-type doped region; a second n-type doped regionarranged between its own welland an adjacent unit cell's well; a gate insulating film, which covers at least partially the first and second n-type doped regions and the well; a gate electrodearranged on the gate insulating film; and a third n-type doped region, which is arranged adjacent to the second n-type doped region so as to cover one of the vertices of the unit cell and which has a dopant concentration that is higher than the drift layer and lower than the second n-type doped region.