The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jul. 09, 2019
Panasonic Corporation, Osaka, JP;
PANASONIC CORPORATION, Osaka, JP;
Abstract
The object of the present invention is to provide a Group III nitride semiconductor light emitting diode having improved light extraction efficiency. A Group III nitride semiconductor light emitting diode according to the present disclosure includes an RAMOlayer including a single crystal represented by the general formula RAMO(wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn and Cd); and a layered product stacked on the RAMOlayer. The layered product includes at least a light emitting layer including a Group III nitride semiconductor. A degree of flatness of a surface, of the RAMOlayer, opposite to the layered product is lower than a degree of flatness of a surface, of the RAMOlayer, adjacent to the layered product.