The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Nov. 27, 2002
Kenya Yamashita, Kadoma, JP;
Makoto Kitabatake, Nara, JP;
Kunimasa Takahashi, Iabaraki, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Ibaraki, JP;
Ryoko Miyanaga, Nara, JP;
Kenya Yamashita, Kadoma, JP;
Makoto Kitabatake, Nara, JP;
Kunimasa Takahashi, Iabaraki, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Ibaraki, JP;
Ryoko Miyanaga, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An upper part of a SIC substrateis oxidized at a temperature of 800 to 1400° C., inclusive, in an oxygen atmosphere at 1.4×10Pa or less, thereby forming a first insulating filmwhich is a thermal oxide film of 20 nm or less in thickness. Thereafter, annealing is performed, and then a first cap layer, which is a nitride film of about 5 nm in thickness, is formed thereon by CVD. A second insulating film, which is an oxide film of about 130 nm in thickness, is deposited thereon by CVD. A second cap layer, which is a nitride film of about 10 nm in thickness, is formed thereon. In this manner, a gate insulating filmmade of the first insulating filmthrough the second cap layeris formed, thus obtaining a low-loss highly-reliable semiconductor device.