Osaka, Japan

Kunimasa Takahashi

This inventor holds 42 USPTO granted patents and 1 published patent application and 8 EPO patents, primarily in Semiconductor Technology. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Nuvoton Technology Corporation Japan. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kunimasa Takahashi. Retrieved from https://idiyas.com/inventor/kunimasa-takahashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 66.7


Average Co-Inventor Count = 4.4

ph-index = 12

Forward Citations = 607(Granted Patents)


Location History:

  • Yamatokoriyama, JP (2001)
  • Ibaraki, JP (2003 - 2009)
  • Iabaraki, JP (2010)
  • Hyogo, JP (2010)
  • Osaka, JP (2001 - 2021)

Company Filing History:


Years Active: 2001-2025

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Areas of Expertise:
Semiconductor Light-Emitting Element
Silicon Carbide
Nitride Semiconductor
Wide Band-Gap
Light Source
High-Breakdown-Voltage
MISFET
Field Effect Transistor
Power Device
Communication System
Active Region
Manufacturing Method
42 patents (USPTO):Explore Patents

Title: Kunimasa Takahashi: Pioneering Innovator in Semiconductor Technology

Introduction

Kunimasa Takahashi, hailing from Osaka, Japan, is a distinguished inventor with a remarkable portfolio of 40 patents. His contributions primarily focus on semiconductor technology, specifically in light-emitting elements that feature prominently in modern electronics.

Latest Patents

One of Takahashi's latest patents addresses a semiconductor light-emitting element, which includes a GaN substrate, a first semiconductor layer, an active layer made of nitride semiconductor, an electron barrier layer, and a second semiconductor layer. This innovative design aims to optimize the performance and efficiency of light-emitting devices. Additionally, he has developed a nitride semiconductor light-emitting element and light source that incorporates an active layer situated between n-type and p-type nitride semiconductor layers. This design includes a unique projection in the p-type layer, which enhances the device's functionality through precise control of material properties.

Career Highlights

Throughout his notable career, Kunimasa Takahashi has worked with industry-leading companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His experience in these organizations has equipped him with profound technical expertise and insights into the semiconductor industry, significantly influencing his inventive work.

Collaborations

Takahashi has collaborated with several esteemed colleagues, including Makoto Kitabatake and Osamu Kusumoto. These partnerships have contributed to innovative breakthroughs and advancements in the semiconductor field, fostering a spirit of collaboration and shared knowledge among inventors.

Conclusion

Kunimasa Takahashi stands as a prominent figure in semiconductor innovation, having made substantial contributions through his patents and collaborations. His work continues to impact the development of light-emitting technologies, cementing his legacy as an influential inventor in this critical area of research and application.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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