The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Oct. 28, 2013
Panasonic Corporation, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Ryou Kato, Osaka, JP;
Shunji Yoshida, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an InGaN (where 0<y<1) well layer, between the InGaN (where 0<y<1) well layer and a GaN barrier layer, or in a region of the GaN barrier layer that is located closer to the InGaN (where 0<y<1) well layer. A concentration of Si at one interface of the GaN barrier layer on a growing direction side is either zero or lower than a concentration of Si in the Si-doped layer.