The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Sep. 10, 2020
Panasonic Semiconductor Solutions Co., Ltd., Kyoto, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.