The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jul. 29, 2021
Nuvoton Technology Corporation Japan, Kyoto, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor light-emitting device includes: a first semiconductor layer containing a first conductivity type nitride semiconductor; an active layer containing a nitride semiconductor including Ga or In; an electron barrier layer containing a nitride semiconductor including at least Al, and being of a second conductivity type; and a second semiconductor layer containing a second conductivity type nitride semiconductor. The electron barrier layer includes a region where an Al composition ratio increases monotonically toward the second semiconductor layer. A maximum impurity concentration position of the second conductivity type in the electron barrier layer is located between an interface on an active layer side of the electron barrier layer and an intermediate position between a maximum Al composition ratio position of the electron barrier layer in the region and an interface on an active layer side of the electron barrier layer.