The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Mar. 27, 2008
Kunimasa Takahashi, Hyogo, JP;
Chiaki Kudou, Hyogo, JP;
Kunimasa Takahashi, Hyogo, JP;
Chiaki Kudou, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method of producing a silicon carbide semiconductor device, including: step (A) of forming an impurity-doped region by implanting impurity ionsinto at least a portion of a silicon carbide layerformed on a first principal face of a silicon carbide substratehaving first and second principal faces; step (B) of forming capping layershaving thermal resistance on at least an upper faceof the silicon carbide layerand on at least a second principal faceof the silicon carbide substrate; and step (C) of performing an activation annealing treatment by heating the silicon carbide layerat a predetermined temperature.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile