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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9147804 B1

PDFFull Text
Date of Patent:
Sep. 29, 2015

Filed:

Sep. 17, 2013

Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element

Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Ryou Kato, Osaka, JP;

Kunimasa Takahashi, Osaka, JP;

Masaki Fujikane, Osaka, JP;

Toshiya Yokogawa, Nara, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Matthew W Such

Assistant Examiner:

Warren H Kilpatrick

Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/02 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/025 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 33/22 (2013.01); H01L 33/325 (2013.01); H01L 33/40 (2013.01);
Abstract

A nitride semiconductor light-emitting element includes: n-side and p-side electrodes; n-type and p-type nitride semiconductor layers; and an active layer arranged between the n- and p-type nitride semiconductor layers. The p-type nitride semiconductor layer has a projection having a height of 30 nm to 50 nm. The projection is formed of a p-type nitride semiconductor including magnesium and silicon. The p-type nitride semiconductor has a silicon concentration of 1.0×10cmto 6.0×10cm. The projection projects from the active layer toward the p-side electrode. On a plan view of the nitride semiconductor light-emitting element, the p-side electrode overlaps with the projection. The projection includes a dislocation. The projection is surrounded with a flat surface which is formed of the p-type nitride semiconductor. And the projection has a higher dislocation density than the flat surface.

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