The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Sep. 12, 2012
Tsutomu Kiyosawa, Hyogo, JP;
Kazuyuki Sawada, Hyogo, JP;
Kunimasa Takahashi, Osaka, JP;
Yuki Tomita, Hyogo, JP;
Tsutomu Kiyosawa, Hyogo, JP;
Kazuyuki Sawada, Hyogo, JP;
Kunimasa Takahashi, Osaka, JP;
Yuki Tomita, Hyogo, JP;
Abstract
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region.