Semiconductor element and manufacturing method therefor

Abstract

A semiconductor deviceincludes: a body regionof a first conductivity type placed on a principal surface of a substrate; a silicon carbide layerincluding a drift regionof a second conductivity type; a channel layerof the second conductivity type formed by silicon carbide and placed on the body regionand the drift regionon a surface of the silicon carbide layer; a gate insulating filmplaced on the channel layer; a gate electrodeinsulated from the silicon carbide layerby the gate insulating film; a source electrodeprovided on the silicon carbide layer; and a drain electrodeprovided on a reverse surface of the substrate, wherein the source electrodeis in contact with the body regionand the channel layer; and a second conductivity type impurity concentration on a surface of the silicon carbide layerthat is in contact with the source electrodeis less than or equal to a second conductivity type impurity concentration of the channel layer. Thus, it is possible to provide a silicon carbide semiconductor device having a low loss and a desirable switching characteristic.