The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Apr. 19, 2022
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Kunimasa Takahashi, Toyama, JP;

Shinji Yoshida, Shiga, JP;

Hidetoshi Furukawa, Toyama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/30 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/305 (2013.01); H01S 5/221 (2013.01); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01);
Abstract

A semiconductor light-emitting element includes a light emission layer including a group III nitride semiconductor; an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al; and a p-type clad layer disposed above and in contact with the electron barrier layer, wherein the electron barrier layer and the p-type clad layer contain Mg as a dopant, and the p-type clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side.


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