Nara, Japan

Osamu Kusumoto

This inventor holds 48 USPTO granted patents and 6 EPO patents, primarily in Silicon Carbide Semiconductors. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Panasonic Intellectual Property Management Co., Ltd.. Active years: 1994-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Kusumoto. Retrieved from https://idiyas.com/inventor/osamu-kusumoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 77.1

 

Average Co-Inventor Count = 4.4

ph-index = 12

Forward Citations = 651(Granted Patents)


Location History:

  • Sakai, JP (1994 - 1995)
  • Kyoto, JP (2000)
  • Hyogo, JP (2010 - 2011)
  • Nara, JP (1998 - 2022)

Company Filing History:


Years Active: 1994-2022

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Power Converter
Electrical Apparatus
Manufacturing Method
Wide Band-Gap
High-Temperature Applications
MISFET
Inverter
Epitaxial Layer
Dopant Profiles
Layered Structure
48 patents (USPTO):Explore Patents

Title: Innovator Profile: Osamu Kusumoto

Introduction

Osamu Kusumoto, a notable inventor based in Nara, Japan, has significantly contributed to the field of semiconductor technology. With an impressive portfolio of 48 patents to his name, his work primarily revolves around advancements in silicon carbide semiconductor devices. These innovations have paved the way for enhanced performance in various electronic applications.

Latest Patents

Osamu Kusumoto's latest patents showcase his expertise in silicon carbide semiconductor devices, which include innovative structures designed to improve efficiency and reliability. One of his prominent patents involves a silicon carbide semiconductor device featuring a transistor region, a diode region, a gate line region, and a gate pad region. This design strategically sandwiches the gate pad and gate line regions between the diode regions, effectively preventing breakdown of the insulating film during operation without compromising the quality of the gate insulating film.

Another notable patent elaborates on a silicon carbide semiconductor device that incorporates a first conductivity type silicon carbide substrate with an active region and a surrounding termination region. This invention includes multiple unit cells equipped with transistor structures and a termination structure that integrates several protective films, ensuring optimal performance and reliability.

Career Highlights

Throughout his career, Osamu Kusumoto has made significant strides within reputable companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His dedication to semiconductor research and innovation has led to numerous advancements within the industry, enhancing device performance and reliability in consumer electronics.

Collaborations

Kusumoto’s collaborations with fellow inventors, including Masao Uchida and Makoto Kitabatake, have fostered a creative environment that stimulates innovation. This teamwork has contributed significantly to the development of cutting-edge technologies in semiconductor devices, demonstrating the power of collaboration in driving forward the field of electronics.

Conclusion

Osamu Kusumoto stands out as a prolific inventor whose contributions have had a substantial impact on semiconductor technology. With 48 patents and an extensive career at prestigious organizations, he continues to inspire future generations of inventors in the pursuit of innovation and excellence in electronics. His latest patents highlight his commitment to advancing semiconductor technology, ensuring that devices remain efficient, reliable, and at the forefront of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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