The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Apr. 28, 2010
Kazuhiro Adachi, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Osaka, JP;
Koichi Hashimoto, Osaka, JP;
Shun Kazama, Osaka, JP;
Kazuhiro Adachi, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Osaka, JP;
Koichi Hashimoto, Osaka, JP;
Shun Kazama, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor elementincluding an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor elementincludes a silicon carbide semiconductor substrateof a first conductivity type, a semiconductor layerof the first conductivity type, a body regionof a second conductivity type, a source regionof the first conductivity type, an epitaxial channel layerin contact with the body region, a source electrode, a gate insulating film, a gate electrodeand a drain electrode. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor elementfunctions as a diode in which current flows from the source electrodeto the drain electrodethrough the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.